Product Summary
employing the Schottky Barrier principle in a large area metal–to–siliconpower diode. State–of–the–art geometry features epitaxial construction withoxide passivation and metal overlay contact.
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||||||||||
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![]() MBR360 |
![]() ON Semiconductor |
![]() Schottky (Diodes & Rectifiers) 3A 60V |
![]() Data Sheet |
![]() Negotiable |
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![]() MBR360G |
![]() ON Semiconductor |
![]() Schottky (Diodes & Rectifiers) 3A 60V |
![]() Data Sheet |
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![]() MBR360RL |
![]() ON Semiconductor |
![]() Schottky (Diodes & Rectifiers) 3A 60V |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() MBR360RLG |
![]() ON Semiconductor |
![]() Schottky (Diodes & Rectifiers) 3A 60V |
![]() Data Sheet |
![]()
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![]() MBR360TR |
![]() |
![]() DIODE SCHOTTKY 60V 3A C-16 |
![]() Data Sheet |
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