Product Summary
employing the Schottky Barrier principle in a large area metal–to–siliconpower diode. State–of–the–art geometry features epitaxial construction withoxide passivation and metal overlay contact.
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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MBR360 |
ON Semiconductor |
Schottky (Diodes & Rectifiers) 3A 60V |
Data Sheet |
Negotiable |
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MBR360G |
ON Semiconductor |
Schottky (Diodes & Rectifiers) 3A 60V |
Data Sheet |
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MBR360RL |
ON Semiconductor |
Schottky (Diodes & Rectifiers) 3A 60V |
Data Sheet |
Negotiable |
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MBR360RLG |
ON Semiconductor |
Schottky (Diodes & Rectifiers) 3A 60V |
Data Sheet |
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MBR360TR |
DIODE SCHOTTKY 60V 3A C-16 |
Data Sheet |
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